GOFORD 5N20A

GOFORD · FETs & Power MOSFETs · MPN 5N20A

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Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage200V
Output Capacitance(Coss)21pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)420mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)247pF
Vgs±20V

Technical details

N-Channel 200V 5A 78W Through Hole TO-251(IPAK)

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