GOFORD 4435-BQ

GOFORD · FETs & Power MOSFETs · MPN 4435-BQ

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Specifications

Output Capacitance(Coss)233pF
Pd - Power Dissipation2.5W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)40nC
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Reverse Transfer Capacitance (Crss@Vds)203pF
RDS(on)12mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.818nF

Technical details

P-Channel 30V 11A 2.5W Surface Mount SOP-8

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