GOFORD 4435

GOFORD · FETs & Power MOSFETs · MPN 4435

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Specifications

Gate Charge(Qg)40nC
Drain to Source Voltage30V
Output Capacitance(Coss)233pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)203pF
RDS(on)12mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.818nF
Vgs±20V

Technical details

P-Channel 30V 10A 3.1W Surface Mount SOP-8

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