GOFORD · FETs & Power MOSFETs · MPN 3N25
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| Gate Charge(Qg) | 4.7nC |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 27pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 187pF |
| Vgs | ±20V |
250V 3A 50W Through Hole TO-251