GOFORD 3401H-B

GOFORD · FETs & Power MOSFETs · MPN 3401H-B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)9.5nC
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)47mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)950pF
Vgs±12V

Technical details

30V 5.3A 1.2W Surface Mount SOT-23

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