GOFORD 3400H

GOFORD · FETs & Power MOSFETs · MPN 3400H

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Specifications

Gate Charge(Qg)5.2nC
Drain to Source Voltage30V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))960mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)27mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)255pF
Vgs±12V

Technical details

N-Channel 30V 5.8A 1.4W Surface Mount SOT-23

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