GOFORD 2305-B

GOFORD · FETs & Power MOSFETs · MPN 2305-B

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)12nC
Output Capacitance(Coss)128pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)116pF
RDS(on)50mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.05nF
Vgs±12V

Technical details

P-Channel 20V 4A 1.4W Surface Mount SOT-23

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