GOFORD 2301

GOFORD · FETs & Power MOSFETs · MPN 2301

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Specifications

Gate Charge(Qg)8nC
Drain to Source Voltage20V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)51mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)550pF
Vgs±12V

Technical details

P-Channel 20V 3A 1W Surface Mount SOT-23

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