GOFORD 20N06

GOFORD · FETs & Power MOSFETs · MPN 20N06

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Specifications

Gate Charge(Qg)25nC
Drain to Source Voltage60V
Output Capacitance(Coss)72pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.609nF
Vgs±20V

Technical details

N-Channel 60V 25A 41W Surface Mount TO-252

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