GOFORD 2002A

GOFORD · FETs & Power MOSFETs · MPN 2002A

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Specifications

Gate Charge(Qg)16nC
Drain to Source Voltage190V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)410mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)733pF
Vgs±20V

Technical details

190V 5A 1.7V 1.4W 410mΩ@10V 1 N-channel N-Channel SOT-23-6 Single FETs, MOSFETs RoHS

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