GOFORD 18N20F

GOFORD · FETs & Power MOSFETs · MPN 18N20F

No reviews yet — be the first to review GOFORD 18N20F.

Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage200V
Output Capacitance(Coss)73pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)123mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)852pF
Vgs±20V

Technical details

N-Channel 200V 18A 110W Through Hole TO-220F

Related FETs & Power MOSFETs