GOFORD 1216D2

GOFORD · FETs & Power MOSFETs · MPN 1216D2

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Specifications

Gate Charge(Qg)35nC
Drain to Source Voltage12V
Output Capacitance(Coss)680pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation18W
RDS(on)12.7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)590pF
Number1 P-Channel
Input Capacitance(Ciss)2.7nF
Vgs±8V

Technical details

P-Channel 12V 16A 18W Surface Mount DFN2x2-6L

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