GOFORD · FETs & Power MOSFETs · MPN 11N10
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| Gate Charge(Qg) | 163nC |
|---|---|
| Drain to Source Voltage | 113V |
| Output Capacitance(Coss) | 380pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 220W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 7.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
| Vgs | ±20V |
100V 110A 220W Through Hole TO-220