GOFORD 03N06

GOFORD · FETs & Power MOSFETs · MPN 03N06

No reviews yet — be the first to review GOFORD 03N06.

Specifications

Gate Charge(Qg)14.6nC
Drain to Source Voltage60V
Output Capacitance(Coss)24pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)458pF
Vgs±20V

Technical details

N-Channel 60V 3A 1.7W Surface Mount SOT-23

Related FETs & Power MOSFETs