GL GL80N10A4

GL · FETs & Power MOSFETs · MPN GL80N10A4

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)354pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF
TypeN-Channel

Technical details

N-Channel 100V 80A 125W Surface Mount TO-252

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