GL · FETs & Power MOSFETs · MPN GL6009AS-8
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.6W |
| RDS(on) | 14mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
N-Channel 60V 9A 2.6W Surface Mount SOIC-8