GL GL50N06AD3

GL · FETs & Power MOSFETs · MPN GL50N06AD3

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation85W
RDS(on)13.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)780pF

Technical details

N-Channel 60V 50A 85W Surface Mount QFN(3x3)

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