GL GL50N03A4

GL · FETs & Power MOSFETs · MPN GL50N03A4

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

30V 50A 3V 60W 11mΩ@10V 1 N-channel N-Channel TO-252-2 Single FETs, MOSFETs RoHS

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