GL GL30P10A4

GL · FETs & Power MOSFETs · MPN GL30P10A4

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)780pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.7nF
TypeP-Channel

Technical details

P-Channel 100V 30A 120W Surface Mount TO-252

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