GL · FETs & Power MOSFETs · MPN GL200N06A8
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 850pF |
| Current - Continuous Drain(Id) | 208A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 333W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.1nF |
| Type | N-Channel |
60V 208A 4V 333W 3mΩ@10V 1 N-channel N-Channel TO-220AB-3 Single FETs, MOSFETs RoHS