GL GL10N10B4S

GL · FETs & Power MOSFETs · MPN GL10N10B4S

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Specifications

Gate Charge(Qg)4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)255pF
TypeN-Channel

Technical details

N-Channel 100V 10A 40W Surface Mount TO-252

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