FUXINSEMI · FETs & Power MOSFETs · MPN Si2318CDS
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| Gate Charge(Qg) | 5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 70pF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.04W |
| RDS(on) | 32mΩ@10V;50mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 560pF |
40V 4A 3V 1.04W 1 N-channel SOT-23 Single FETs, MOSFETs RoHS