FUXINSEMI SI2310A

FUXINSEMI · FETs & Power MOSFETs · MPN SI2310A

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.1nC@10V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.2W
RDS(on)100mΩ@10V;120mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-channel
Input Capacitance(Ciss)330pF

Technical details

N-Channel 60V 3A 1.2W Surface Mount SOT-23

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