FUXINSEMI SI2302

FUXINSEMI · FETs & Power MOSFETs · MPN SI2302

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)2.9nC@4.5V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation400mW
RDS(on)115mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 N-channel
Input Capacitance(Ciss)280pF

Technical details

N-Channel 20V 3A 0.4W Surface Mount SOT-23

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