FUXINSEMI · FETs & Power MOSFETs · MPN SI2301CDS
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| Gate Charge(Qg) | 6.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 142mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 500pF |
P-Channel 20V 3A 0.4W Surface Mount SOT-23