FUXINSEMI · FETs & Power MOSFETs · MPN SI01P10
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 4nC@10V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 650mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±20V |
P-Channel 100V 1A 0.5W Surface Mount SOT-23