FUXINSEMI FS1012ET

FUXINSEMI · FETs & Power MOSFETs · MPN FS1012ET

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Current - Continuous Drain(Id)700mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation300mW
RDS(on)620mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)78pF
TypeN-Channel

Technical details

N-Channel 20V 0.7A 0.3W Surface Mount SOT-523

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