FUXINSEMI FPMZ290UNE2YL

FUXINSEMI · FETs & Power MOSFETs · MPN FPMZ290UNE2YL

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Specifications

Output Capacitance(Coss)17pF
Pd - Power Dissipation200mW
Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)1nC
Current - Continuous Drain(Id)-
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)190mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)41pF

Technical details

200mW 20V 750mV 190mΩ@4.5V 1 N-channel N-Channel DFN1006-3L Single FETs, MOSFETs RoHS

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