FUXINSEMI · FETs & Power MOSFETs · MPN C3M0016120D
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 207nC |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 115A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 556W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 22.3mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.085nF |
| Type | N-Channel |
1.2kV 115A 3.6V 556W 22.3mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS