FUXINSEMI C2M0040120D

FUXINSEMI · FETs & Power MOSFETs · MPN C2M0040120D

No reviews yet — be the first to review FUXINSEMI C2M0040120D.

Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)120nC
Current - Continuous Drain(Id)55A
Output Capacitance(Coss)171pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation278W
RDS(on)52mΩ
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)2.44nF
TypeN-Channel

Technical details

1.2kV 55A 4V 278W 52mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs