FUXINSEMI BC847BS

FUXINSEMI · Transistors (BJTs) · MPN BC847BS

No reviews yet — be the first to review FUXINSEMI BC847BS.

Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation200mW
Number2 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 200MHz Surface Mount SOT-363

Related Transistors (BJTs)