FUXINSEMI B772-Y

FUXINSEMI · Transistors (BJTs) · MPN B772-Y

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain400
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 3A 50MHz 0.5W Surface Mount SOT-89

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