FUXINSEMI AO3407A

FUXINSEMI · FETs & Power MOSFETs · MPN AO3407A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6.8nC
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.3W
RDS(on)60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)74pF
Number1 P-Channel
Input Capacitance(Ciss)580pF

Technical details

P-Channel 30V 4.1A 1.3W Surface Mount SOT-23

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