FUXINSEMI 2N7002KD

FUXINSEMI · FETs & Power MOSFETs · MPN 2N7002KD

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)340mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)5.3Ω@4.5V
Number2 N-Channel
Input Capacitance(Ciss)40pF
Vgs±20V

Technical details

N-Channel Array 60V 0.34A 0.15W Surface Mount SOT-363

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