FOSAN · Transistors (BJTs) · MPN S8550-6AF
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 25V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 400 |
| Pd - Power Dissipation | 300mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 800mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 600mV |
Bipolar (BJT) Transistor PNP 25V 800mA 200MHz 300mW Surface Mount SOT-23