FOSAN S1015

FOSAN · Transistors (BJTs) · MPN S1015

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation225mW
typePNP
Number1 PNP
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 50V 150mA 225mW Surface Mount SOT-23

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