FOSAN BC858B

FOSAN · Transistors (BJTs) · MPN BC858B

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Specifications

Current - Collector Cutoff4uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain475
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation225mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA

Technical details

Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 225mW Surface Mount SOT-23

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