FOSAN 2SC3356-6AF

FOSAN · Transistors (BJTs) · MPN 2SC3356-6AF

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)7GHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO3V
DC Current Gain250
Pd - Power Dissipation200mW
Configuration-
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 12V 100mA 7000MHz 200mW Surface Mount SOT-23

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