FOSAN 2SA812

FOSAN · Transistors (BJTs) · MPN 2SA812

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain600
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 50V 100mA 180MHz Surface Mount SOT-23

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