FOSAN 2SA1162

FOSAN · Transistors (BJTs) · MPN 2SA1162

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor 50V 150mA 80MHz Surface Mount SOT-23

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