FOSAN 13001-6AF

FOSAN · Transistors (BJTs) · MPN 13001-6AF

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO7V
DC Current Gain30
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 400V 200mA 8MHz 350mW Surface Mount SOT-23

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