Existar · FETs & Power MOSFETs · MPN E100N4P5DH1
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| Gate Charge(Qg) | 91nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.44nF |
100V 170A 2.7V 250W 4.5mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS