Existar · FETs & Power MOSFETs · MPN E080N8P7CH1
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| Gate Charge(Qg) | 112nC |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 8.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 171pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.4nF |
80V 80A 2.8V 125W 8.7mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS