Existar E080N8P7AH1

Existar · FETs & Power MOSFETs · MPN E080N8P7AH1

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Specifications

Gate Charge(Qg)112nC
Configuration-
Drain to Source Voltage80V
Current - Continuous Drain(Id)81A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.85V
Pd - Power Dissipation125W
RDS(on)8.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)180pF
Number1 N-channel
Input Capacitance(Ciss)4.45nF

Technical details

N-Channel 80V 81A 125W Through Hole TO-220

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