EPC · FETs & Power MOSFETs · MPN EPC8010
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 360pC |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 25pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| RDS(on) | 120mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 43pF |
100V 4A 1.4V 120mΩ 1 N-channel N-Channel SMD-6P,2.1x0.9mm Single FETs, MOSFETs RoHS