EPC · FETs & Power MOSFETs · MPN EPC2619
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| Gate Charge(Qg) | 8.5nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 29A |
| Output Capacitance(Coss) | 350pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| RDS(on) | 3.3mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | - |
| Input Capacitance(Ciss) | 1180pF |
100V 29A 1.1V 3.3mΩ SMD,2.5x1.5mm Single FETs, MOSFETs RoHS