EPC EPC2110ENGRT

EPC · FETs & Power MOSFETs · MPN EPC2110ENGRT

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)0.8nC
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Pd - Power Dissipation-
RDS(on)80mΩ
Reverse Transfer Capacitance (Crss@Vds)1pF
Number2 N-Channel
Input Capacitance(Ciss)85pF

Technical details

120V 3.4A 1.4V 80mΩ 2 N-Channel N-Channel Single FETs, MOSFETs RoHS

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