EPC · FETs & Power MOSFETs · MPN EPC2110
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| Current - Continuous Drain(Id) | 3.4A |
|---|---|
| RDS(on) | 80mΩ |
| Pd - Power Dissipation | - |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 120V |
| Technology | E-mode |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 85pF |
| Gate Charge(Qg) | 0.8nC |
| Operating Temperature | -40℃~+150℃ |
3.4A 80mΩ 1.4V 2 N-Channel FET, MOSFET Arrays RoHS