EPC EPC2100ENGRT

EPC · FETs & Power MOSFETs · MPN EPC2100ENGRT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)3.6nC;15nC
Output Capacitance(Coss)290pF;1370pF
Current - Continuous Drain(Id)10A;40A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
TechnologyE-mode
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)15pF;64pF
RDS(on)8.2mΩ;2.1mΩ
Number2 N-Channel
Input Capacitance(Ciss)395pF;1630pF

Technical details

30V 1.3V 2 N-Channel N-Channel Single FETs, MOSFETs RoHS

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