EPC · FETs & Power MOSFETs · MPN EPC2100
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| Current - Continuous Drain(Id) | 10A;40A |
|---|---|
| Pd - Power Dissipation | - |
| RDS(on) | 8.2mΩ;2.1mΩ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Drain to Source Voltage | 30V |
| Technology | E-mode |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF;64pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 395pF;1630pF |
| Gate Charge(Qg) | 3.6nC;15nC |
| Operating Temperature | -40℃~+150℃ |
1.3V 2 N-Channel FET, MOSFET Arrays RoHS